#FP35R12W2T4_B11 Infineon FP35R12W2T4_B11 New Insulated Gate Bipolar Transistor 35A I(C) 1200V V(BR)CES N-Channel MODULE-35, FP35R12W2T4_B11 pictures, FP35R12W2T4_B11 price, #FP35R12W2T4_B11 supplier
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Email: [email protected]
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Email: [email protected]
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FP35R12W2T4_B11
Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:35A
Collector current Icp:70A
Collector power dissipation Pc:215W
Collector-Emitter voltage VCES:1200V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Insulated Gate Bipolar Transistor 35A I(C) 1200V V(BR)CES N-Channel MODULE-35