EUPEC FP10R12W1T4-B3 EUPEC FP10R12W1T4-B3

#FP10R12W1T4-B3 EUPEC FP10R12W1T4-B3 New Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-21, FP10R12W1T4-B3 pictures, FP10R12W1T4-B3 price, #FP10R12W1T4-B3 supplier
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Manufacturer Part Number: FP10R12W1T4_B3
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X21
Pin Count: 21
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.52
Case Connection: ISOLATED
Collector Current-Max (IC): 20 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X21
Number of Elements: 6
Number of Terminals: 21
Operating Temperature-Max: 175 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 105 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER

Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-21

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